Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy
- 1 June 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (11) , 1035-1037
- https://doi.org/10.1063/1.94628
Abstract
InGaAsP/InGaP lasers emitting at 724–727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm2 by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.Keywords
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