Continuously operated visible-light-emitting lasers using liquid-phase-epitaxial InGaPAs grown on GaAs substrates
- 1 July 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 24-26
- https://doi.org/10.1063/1.94155
Abstract
Continuously operated visible‐light‐emitting InGaPAs lasers are fabricated using liquid‐phase‐epitaxial wafers grown on a GaAs substrate. The wavelength is 785 nm. The lowest threshold current is 80 mA (6 kA/cm2 in current density). The highest quantum efficiency is 33%. The characteristic temperature is 135 K. The InGaPAs lasers free from dark line defects are presumably grown on GaAs.Keywords
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