Red-emitting Ga(As,P)/(In,Ga)P heterojunction lasers
- 1 June 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (6) , 3140-3149
- https://doi.org/10.1063/1.325307
Abstract
This paper describes in detail the properties of vapor‐grown double‐heterojunction lasers of Ga(As,P)/(In,Ga)P with room‐temperature threshold current densities as low as 3400 A/cm2 at 7000 Å and 6600 A/cm2 at 6800 Å. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter‐wavelength direct‐indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse‐mode operation to 70 °C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.This publication has 24 references indexed in Scilit:
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