Visible GaAs0.7P0.3 cw heterojunction lasers
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (5) , 249-251
- https://doi.org/10.1063/1.89353
Abstract
Vapor‐grown heteroepitaxial structures of GaAs0.7P0.3/In0.34Ga0.66P have been fabricated into double‐heterojunction laser diodes with room‐temperature threshold current densities as low as 3400 A/cm2 at λL≃7000 Å. This value is about three times less than the best reported for (Al,Ga)As lasers at this wavelength. From the (Ga,As)P/(In,Ga)P lattice‐matched structures, cw operation at 10 °C has been achieved.Keywords
This publication has 6 references indexed in Scilit:
- Low-threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experimentJournal of Applied Physics, 1976
- Vapor-grown cw room-temperature GaAs/InyGa1−yP lasersApplied Physics Letters, 1976
- Red-light-emitting laser diodes operating cw at room temperatureApplied Physics Letters, 1976
- Interfacial recombination at (AlGa)As/GaAs heterojunction structuresJournal of Applied Physics, 1976
- Room-temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μmApplied Physics Letters, 1975
- Room-temperature heterojunction laser diodes from vapor-grown In1−xGaxP/GaAs structuresApplied Physics Letters, 1974