Red-light-emitting laser diodes operating cw at room temperature
- 15 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (10) , 598-600
- https://doi.org/10.1063/1.88578
Abstract
Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200–8000‐Å spectral range. These devices operate cw with simple oxide‐isolated stripe contacts to 7400 Å, which extends cw operation for the first time into the visible (red) portion of the spectrum.Keywords
This publication has 8 references indexed in Scilit:
- Very low-threshold double-heterojunction AlxGa1−xAs injection lasersApplied Physics Letters, 1975
- The angular beam divergence in double-heterojunction lasers with very thin active regionsIEEE Journal of Quantum Electronics, 1975
- New heteroisolation stripe-geometry visible-light-emitting lasersIEEE Journal of Quantum Electronics, 1975
- SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATUREApplied Physics Letters, 1971
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- FABRY-PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2Applied Physics Letters, 1970
- Low-threshold alxGa1-xAs visible and IR-light-emitting diode lasersIEEE Journal of Quantum Electronics, 1970
- IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE-CONFINEMENT STRUCTUREApplied Physics Letters, 1969