Very low-threshold double-heterojunction AlxGa1−xAs injection lasers
- 15 December 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (12) , 652-654
- https://doi.org/10.1063/1.88351
Abstract
Double‐heterojunction AlxGa1−xAs lasers have been prepared with a compositional discontinuity Δx at the heterojunctions of 0.45–0.68 and active region widths of ∼0.1 μm. These devices have the lowest room‐temperature threshold current densities (475 A/cm2) yet reported, with a differential quantum efficiency of 40% or more.Keywords
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