Thermal Expansion of AlAs
- 1 September 1970
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (10) , 3926-3927
- https://doi.org/10.1063/1.1658389
Abstract
The lattice parameter of AlAs has been very accurately measured as a function of temperature between 15° and 840°C, and the coefficient of thermal expansion has been determined. The lattice parameter at 0°C is 5.6605±0.0005 Å and the coefficient of thermal expansion is (5.20±0.05) ×10−6/°C. A comparison is made to GaAs which indicates that there is a perfect lattice match at about 900°C and 0.14% lattice mismatch at room temperature.This publication has 9 references indexed in Scilit:
- Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°CJournal of Applied Physics, 1967
- Coefficient of expansion of gallium arsenide from –62 to 200°CActa Crystallographica, 1966
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Electrical properties of n-type aluminium arsenideSolid-State Electronics, 1965
- Über AluminiumarsenidZeitschrift für anorganische und allgemeine Chemie, 1964
- Mechanical properties of single crystals of siliconPhilosophical Magazine, 1962
- Measurement of the Equilibrium Concentration of Lattice Vacancies in Silver near the Melting PointPhysical Review B, 1960
- Errata; Precision Lattice Constants from X-Ray Powder PhotographsReview of Scientific Instruments, 1936
- Precision Lattice Constants from X-Ray Powder PhotographsReview of Scientific Instruments, 1935