Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
- 1 January 1976
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 37 (6) , 629-637
- https://doi.org/10.1016/0022-3697(76)90113-x
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
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