Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)

Abstract
Liquid phase epitaxial (LPE) In1−xGaxP1−z Asz/In1−xGaxP1−zAsz/In1− x GaxP1−zAsz (x′∼0.66, z′∼0.005; x∼0.71, z∼0.10) double‐heterojunction laser diodes that operate in the yellow at relatively low current densities (J4 A/cm2, λ∼5850 Å, 77 °K) are reported. The lattice‐matched LPE quaternary growth process, employing GaAs1−yPy substrates, and the double‐heterojunction laser diode properties are described.

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