Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)
- 15 August 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (4) , 245-247
- https://doi.org/10.1063/1.88410
Abstract
Liquid phase epitaxial (LPE) In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ (x′∼0.66, z′∼0.005; x∼0.71, z∼0.10) double‐heterojunction laser diodes that operate in the yellow at relatively low current densities (J4 A/cm2, λ∼5850 Å, 77 °K) are reported. The lattice‐matched LPE quaternary growth process, employing GaAs1−yPy substrates, and the double‐heterojunction laser diode properties are described.Keywords
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