Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 14 (10) , 711-713
- https://doi.org/10.1109/jqe.1978.1069676
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- GaAs1−yPy heterojunction lasersJournal of Applied Physics, 1977
- Multiple liquid phase epitaxy of In1−xGaxP1−zAsz double-heterojunction lasers: The problem of lattice matchingApplied Physics Letters, 1977
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAszSolid State Communications, 1976
- In1−xGaxP1−zAsz double-heterojunction-laser operation (77 °K, yellow) in an external grating cavityJournal of Applied Physics, 1976
- Yellow In1−xGaxP1−zAsz double-heterojunction lasersJournal of Applied Physics, 1976
- Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctionsApplied Physics Letters, 1976
- High-power narrow-linewidth operation of GaAs diode lasersApplied Physics Letters, 1973