GaAs1−yPy heterojunction lasers
- 1 September 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3991-3993
- https://doi.org/10.1063/1.324235
Abstract
Data are presented showing that low‐threshold (300 °K) visible‐spectrum GaAs1−yPy and In1−xGaxP1−zAsz DH laser diodes can be grown on GaAs1−yPy substrates of composition at least as high as y=0.41, which corresponds to a short‐wavelength limit of ∼6420 Å for the ternary and ∼6180 Å for the quaternary.This publication has 11 references indexed in Scilit:
- Visible GaAs0.7P0.3 cw heterojunction lasersApplied Physics Letters, 1977
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)Applied Physics Letters, 1976
- Yellow In1−xGaxP1−zAsz double-heterojunction lasersJournal of Applied Physics, 1976
- Low-threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double-heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K)Applied Physics Letters, 1975
- Heterojunction laser operation of N-free and N-doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct-indirect transition (y∼y c?0.46)Journal of Applied Physics, 1975
- Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)-ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)Applied Physics Letters, 1974
- Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)Applied Physics Letters, 1974
- Luminescence, laser, and carrier-lifetime behavior of constant-temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAsApplied Physics Letters, 1974
- Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)Journal of Applied Physics, 1973