Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE

This publication has 8 references indexed in Scilit:

• Low threshold current operation of vapour-grown 650 nm-band InGaAsP/InGaP DH lasers
  Electronics Letters, 1985
• cw operation of an AlGaInP double heterostructure laser diode at 77 K grown by atmospheric metalorganic chemical vapor deposition
  Applied Physics Letters, 1984
• CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
  Japanese Journal of Applied Physics, 1984
• Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
  Applied Physics Letters, 1983
• 0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE
  Electronics Letters, 1983
• Room-temperature cw operation in the visible spectral range of 680–700 nm by AlGaAs double heterojunction lasers
  Applied Physics Letters, 1982
• The influence of bulk nonradiative recombination in the wide band-gap regions of molecular beam epitaxially grown GaAs-AlxGa1−xAs DH lasers
  Applied Physics Letters, 1978
• Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)
  Applied Physics Letters, 1976