Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor deposition
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 987-989
- https://doi.org/10.1063/1.94206
Abstract
Room-temperature pulsed laser operation of (Al0.3Ga0.7)0.5In0.5P/ Ga0.5In0.5P/ (Al0.3Ga0.7)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved for the first time. The lowest threshold current density was 26 kA/cm2 for a diode with a 22-μm-wide and 160-μm-long stripe. The lasing wavelength was 0.683 μm.Keywords
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