Molecular beam epitaxial growth of InGaAlP on (100) GaAs
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 4928-4931
- https://doi.org/10.1063/1.331326
Abstract
InGaAlP epitaxial layers that are lattice matched to (100) GaAs substrates have been successfully grown for the first time by molecular beam epitaxy. The surface of the grown crystal is mirror smooth, and the full width at half-maximum of the double crystal x-ray diffraction pattern is less than 100 sec. The energy gap at the Γ point increases from 1.9 eV (InGaP) to 2.5 eV (InAlP) with increasing AlP mole fraction. The optical waveguide effect was also observed in InGaP/InGaAlP double heterostructure wafers.This publication has 14 references indexed in Scilit:
- Molecular Beam Epitaxial Growth of Undoped Low-Resistivity InxGa1-xP on GaAs at High Substrate Temperatures (500–580°C)Japanese Journal of Applied Physics, 1981
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxyJournal of Applied Physics, 1981
- Improved properties of InxGa1−x As layers grown by molecular-beam epitaxy on InP substratesJournal of Applied Physics, 1981
- Molecular-beam epitaxial growth of InP homoepitaxial layers and their electrical and optical propertiesJournal of Applied Physics, 1981
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x ∼0.5) on GaAsJapanese Journal of Applied Physics, 1981
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxPJournal of Physics and Chemistry of Solids, 1976
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxPJournal of Crystal Growth, 1974
- Asymmetric Cracking in III–V CompoundsJournal of the Electrochemical Society, 1974
- Über das AlPJournal of Physics and Chemistry of Solids, 1960