Organometallic Vapor Phase Epitaxial Growth of In1-xGaxP (x ∼0.5) on GaAs
- 1 April 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (4) , L290
- https://doi.org/10.1143/jjap.20.l290
Abstract
In1-x Ga x P (x∼0.5) layers have been grown on GaAs by low-pressure vapor phase epitaxy using triethylindium (TEI), triethylgallium (TEG) and phosphine. The observation of surface morphology and the measurements of peak energy and half-width of photoluminescence spectra indicate that high quality layers lattice-matched to GaAs substrates can be grown by controlling the substrate temperature and the TEI and TEG flows. The best sample has shown a room-temperature photoluminescence efficiency comparable to that of LPE layers of the same composition.Keywords
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