MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A) , L731-733
- https://doi.org/10.1143/jjap.21.l731
Abstract
Undoped Al0.5In0.5P–Ga0.5In0.5P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwitched Ga0.5In0.5P layer, than that from a single epitaxially-grown Ga0.5In0.5P-layer on (100) GaAs, indicating that high-quality Al0.5In0.5P–Ga0.5In0.5P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 Å.Keywords
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