Growth of single crystal GaN substrate using hydride vapor phase epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 99 (1-4) , 381-384
- https://doi.org/10.1016/0022-0248(90)90548-y
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971