Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN
- 31 January 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 57 (1) , 17-20
- https://doi.org/10.1016/0038-1098(86)90662-9
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditionsJournal of Applied Physics, 1980
- Recombination mechanisms in GaN:ZnJournal of Luminescence, 1979
- Growth and properties of GaxAl1-xN compoundsJournal of Physics C: Solid State Physics, 1978
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973
- Luminescence of Zn- and Cd-doped GaNJournal of Applied Physics, 1972
- Optical studies of the phonons and electrons in gallium nitrideSolid State Communications, 1970
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Raman spectra of AℓN, cubic BN and BPSolid State Communications, 1968