THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
- 15 November 1969
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 15 (10) , 327-329
- https://doi.org/10.1063/1.1652845
Abstract
Single‐crystalline, colorless, GaN has been prepared by a vapor‐phase growth technique previously used to prepare GaAs, GaP, and GaSb. These crystals are the first reported speciments of GaN suitable for good electrical and optical evaluation of this compound. It has been determined that GaN has a direct energy bandgap of 3.39 eV, and that undoped crystals prepared by this method have a very high inherent electron concentration, typically above 1019/cm3, which is probably related to a high density of nitrogen vacancies. Conducting p‐type specimens have been prepared using Ge as the dopant; but this result has been difficult to reproduce, and the samples have been electrically inhomogeneous.Keywords
This publication has 8 references indexed in Scilit:
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Vapor Growth of GaP on GaAs SubstratesJournal of Applied Physics, 1965
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Preparation, Stability, and Luminescence of Gallium NitrideJournal of the Electrochemical Society, 1962
- On the Preparation of the Nitrides of Aluminum and GalliumJournal of the Electrochemical Society, 1961
- Lumineszenz- und Photoleitungseigenschaften von dotiertem GaNZeitschrift für Naturforschung A, 1960
- Notizen: Über den Bandabstand von Galliumnitrid und AluminiumnitridZeitschrift für Naturforschung A, 1957
- Nitrogen Compounds of Gallium. IIIThe Journal of Physical Chemistry, 1932