Vapor Growth of GaP on GaAs Substrates
- 1 September 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (9) , 2887-2890
- https://doi.org/10.1063/1.1714600
Abstract
An open‐tube vapor deposition process has been used to grow GaP epitaxially on GaAs seeds. The overgrowths generally contain large numbers of defects including dislocations, stacking faults, impurity striae, and local strains. The stacking faults and impurity striae may be eliminated by growing on (1̄1̄1̄)‐plane seeds under carefully controlled conditions. The mobility of electrons in n‐type GaP is found to increase from approximately 120 cm2/V sec at 300°K to approximately 600 cm2/V sec at 77°K. Undoped GaP layers are invariably n‐type with carrier concentration in the range 1015–1017/cm3.This publication has 12 references indexed in Scilit:
- Optical and Electrical Properties of Single-Crystal GaP Vapor-Grown on GaAs SubstrateJournal of Applied Physics, 1964
- Structural Defects in GaP Crystals and Their Electrical and Optical EffectsJournal of Applied Physics, 1964
- The Epitaxial Growth of GaP by a Ga[sub 2]O Vapor Transport MechanismJournal of the Electrochemical Society, 1964
- Growth Rates of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1963
- Epitaxial growth of Ge on GaPPhysica, 1962
- Some Properties of p-n Junctions in GaPJournal of Applied Physics, 1961
- Vapor Phase Preparation of Gallium Phosphide CrystalsJournal of the Electrochemical Society, 1961
- The Preparation and Floating Zone Processing of Gallium PhosphideJournal of the Electrochemical Society, 1961
- Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle ProcessIBM Journal of Research and Development, 1960
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959