Broadband Lumped-Element GaAs FET Power Amplifiers
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 81, 126-128
- https://doi.org/10.1109/mwsym.1981.1129843
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Graceful Degradation Properties of Matched N-Port Power Amplifier CombinersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 10 GHz/10 W internally matched flip-chip GaAs power f.e.t.sElectronics Letters, 1980