Comparison of metrology methods for quantifying the line edge roughness of patterned features
- 1 November 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 17 (6) , 2488-2498
- https://doi.org/10.1116/1.591117
Abstract
Comparisons are made of two atomic force microscopes in different modes of operation, and two scanning electron microscopes, one high and one lower resolution for quantifying the edge roughness of patterned features in resist and silicon. Definitions of the edge roughness magnitude and spatial frequency are given. For each metrology method, the parameters that limit the edge roughness measurement and how they compare to the parameters that limit the critical dimension measurement are addressed. An attempt to quantify the edge roughness spatial frequency is also discussed. For the two best metrology methods the repeatability of the measurements was determined, and measurements were made to understand the correlation between them.Keywords
This publication has 17 references indexed in Scilit:
- Line-edge roughness in sub-0.18-μm resist patternsPublished by SPIE-Intl Soc Optical Eng ,1998
- Feasibility of a CVD-resist-based lithography process at 193-nm wavelengthPublished by SPIE-Intl Soc Optical Eng ,1998
- Positive-tone processing of plasma-polymerized methylsilane (PPMS)Published by SPIE-Intl Soc Optical Eng ,1998
- Dual-wavelength photoresist for sub-200-nm lithographyPublished by SPIE-Intl Soc Optical Eng ,1998
- Metrology methods for the quantification of edge roughnessPublished by SPIE-Intl Soc Optical Eng ,1998
- Nanometer-scale dimensional metrology with noncontact atomic force microscopyPublished by SPIE-Intl Soc Optical Eng ,1996
- Toward accurate metrology with scanning force microscopesJournal of Vacuum Science & Technology B, 1995
- 193-nm lithographyIEEE Journal of Selected Topics in Quantum Electronics, 1995
- Optimization of a 193-nm silylation process for sub-0.25-um lithographyPublished by SPIE-Intl Soc Optical Eng ,1995
- Method for imaging sidewalls by atomic force microscopyApplied Physics Letters, 1994