Physical and Electrical Properties of Polycrystalline Silicon Thin Films
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- A model for conduction in polycrystalline silicon—Part II: Comparison of theory and experimentIEEE Transactions on Electron Devices, 1981
- A model for conduction in polycrystalline silicon—Part I: TheoryIEEE Transactions on Electron Devices, 1981
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Arsenic-implanted polysilicon layersApplied Physics A, 1981
- Silicon Oxidation Studies: Morphological Aspects of the Oxidation of Polycrystalline SiliconJournal of the Electrochemical Society, 1980
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Thermal Oxidation of Phosphorus‐Doped Polycrystalline Silicon in Wet OxygenJournal of the Electrochemical Society, 1978
- Arsenic implantation into polycrystalline silicon and diffusion to silicon substrateJournal of Applied Physics, 1977
- Structure of chemically deposited polycrystalline-silicon filmsThin Solid Films, 1973
- Thermal oxidation of polycrystalline silicon filmsMetallurgical Transactions, 1971