Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes
- 1 July 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (7) , 721-727
- https://doi.org/10.1016/0038-1101(85)90023-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Computer modelling of high barrier schottky diodes applied to study of the accuracy of experimental barrier determinationSurface Science, 1983
- Schottky rectifiers on silicon using high barriersSolid-State Electronics, 1983
- A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical ComputationsPhysica Scripta, 1981
- Minority carrier effects upon the small signal and steady-state properties of Schottky diodesSolid-State Electronics, 1973
- Space-charge-limited current in siliconSolid-State Electronics, 1967