Electrical Properties of Boron-Implanted Homoepitaxial Diamond Films
- 1 April 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (4B) , L601-603
- https://doi.org/10.1143/jjap.32.l601
Abstract
Electrical properties produced by boron implantation in homoepitaxial diamond films grown by chemical vapour deposition (CVD) have been studied. Two techniques were employed to anneal out implantation damage: thermal annealing and hydrogen plasma treatment. A large difference in electrical properties between boron-implanted CVD and high-pressure synthesized (HPS) diamonds after thermal annealing has been observed. Hydrogen plasma treatment has a substantial advantage concerning the electrical properties of implanted diamond compared with thermal annealing.Keywords
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