(InAs)3(GaAs)1 superlattice channel field-effect transistor grown by molecular beam epitaxy
- 28 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (9) , 894-895
- https://doi.org/10.1063/1.101618
Abstract
A metal‐insulator‐semiconductor field‐effect transistor (MISFET) using the InAs‐GaAs superlattice as a channel layer has been successfully demonstrated for the first time. Device structure was grown by molecular beam epitaxy. The MISFET with 1.0 μm gate length exhibits a maximum external dc transconductance of 212 mS/mm at Vds =3.0 V and Vg =−1.5 V. This value is high among 1.0 μm gate length devices.Keywords
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