Influence of growth temperature on Be incorporation in molecular beam epitaxy GaAs epilayers
- 1 July 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (1) , 49-51
- https://doi.org/10.1063/1.92533
Abstract
No abstract availableKeywords
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- Stacking-faults in tellurium-doped gallium arsenideJournal of Materials Science, 1968