Mathematical modeling of cold-wall channel CVD reactors
- 1 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 131-144
- https://doi.org/10.1016/0022-0248(89)90612-x
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materialsChemical Engineering Science, 1987
- Chemical Vapor Deposition: A Chemical Engineering PerspectiveReviews in Chemical Engineering, 1985
- Thermal Diffusion Effects in Chemical Vapor Deposition ReactorsJournal of the Electrochemical Society, 1984
- Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference HolographyJournal of the Electrochemical Society, 1982
- A consideration of the effect of the thermal boundary layer on CVD growth ratesJournal of Crystal Growth, 1980
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970
- Vapor Deposition and Etching Open Tube Kinetics under Diffusion Controlled ConditionsJournal of the Electrochemical Society, 1970
- Silicon Epitaxy from Mixtures of SiH4 and HClJournal of the Electrochemical Society, 1970
- Vapor Phase Deposition and Etching of SiliconJournal of the Electrochemical Society, 1965