Deviations from the one-defect approximation: antistructure in III-V compounds
- 20 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (35) , L933-L937
- https://doi.org/10.1088/0022-3719/17/35/001
Abstract
In III-V semiconductors a common mode of vacancy migration is by nearest-neighbour hopping. In the presence of Zn diffusion this mode is greatly enhanced. A consequence is the production of antisite defects, which usually become antistructure pairs as the vacancy returns to its original sublattice. Many important deep-level defects involve vacancies during their creation. One should expect to find neutral antistructure pairs in the vicinity of Zn-O luminescence centres, EL2 defects, etc. Much of the mystery of these centres can be attributed to the dipolar interaction of these antistructure pairs with the nominal defects.Keywords
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