Impurity induced disordering of strained GaP-GaAs1−xPx(x∼0.6) superlattices
- 15 January 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (2) , 185-187
- https://doi.org/10.1063/1.93875
Abstract
Data are presented showing that Zn diffusion into a strained GaP‐GaAs1−xPx (x∼0.6) superlattice (40 periods, Lz∼120 Å GaAsP quantum wells, LB∼120 Å GaP barriers) enhances the interdiffusion of As and P (anion interchange) at the heteriointerfaces, thus resulting in disordered indirect gap bulk crystal GaAs1−xPx (x∼0.8).Keywords
This publication has 9 references indexed in Scilit:
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- A GaAsxP1−x/GaP strained-layer superlatticeApplied Physics Letters, 1982
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- Zn diffusion and disordering of an AlAs-GaAs superlattice along its layersJournal of Applied Physics, 1982
- The effect of trimethylaluminum concentration on the incorporation of P In AlxGa1−xPyAs1−y grown by organometallic vapor phase epitaxyJournal of Electronic Materials, 1982
- Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructuresJournal of Electronic Materials, 1982
- The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structuresJournal of Crystal Growth, 1981
- IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavityApplied Physics Letters, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981