The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures
- 31 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 207-212
- https://doi.org/10.1016/0022-0248(81)90289-x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1−xAs/GaAs superlatticesApplied Physics Letters, 1981
- High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interfaceApplied Physics Letters, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Observation of two-dimensional electrons in LPE-grown GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Room-temperature laser operation of quantum-well Ga(1−x)AlxAs-GaAs laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junctionApplied Physics Letters, 1977
- Direct Observation of Superlattice Formation in a Semiconductor HeterostructurePhysical Review Letters, 1975
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971