Confined-carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p-n junction
- 15 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (8) , 534-536
- https://doi.org/10.1063/1.89767
Abstract
A thin (∼400 Å) LPE In1−xGaxP1−zAsz ’’trap’’ on the p‐type side of an InP junction [Eg(InP)−Eg(InGaPAs) ≡ΔE∼245 meV], is filled by injection to a high enough density to make it possible to observe confined‐particle states and laser modes in a 70‐meV (≳600 Å) range. The position of the modes is in good agreement with the transition energies expected for a finite potential well.Keywords
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