LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active region
- 15 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (4) , 288-290
- https://doi.org/10.1063/1.89665
Abstract
A liquid‐phase‐epitaxial (LPE) double‐heterojunction (DH) laser structure with an ∼1‐μm ’’active region’’ consisting of ≳20 In1−xGaxP1−zAsz and InP lattice‐matched thin layers is described. The thin‐layer dimensions are small enough (<500 Å) to make quantum size effects relevant.Keywords
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