Variation of effective index of refraction in a double-heterojunction laser (In1−xGaxP1−zAsz)
- 1 May 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (5) , 2091-2092
- https://doi.org/10.1063/1.323886
Abstract
Data (197 °K) on InP‐In1−xGaxP1−zAsz‐InP DH diodes are presented showing that the effective index of refraction of a semiconductor laser, [n (λ)−λ dn/dλ], is not a single curve but, instead, is a family of curves that depends upon injection level.This publication has 7 references indexed in Scilit:
- Limitations of the direct-indirect transition on In1−xGaxP1−zAsz heterojunctionsJournal of Applied Physics, 1977
- Multicomponent semiconductor solid solutions and their laser applications (review)Soviet Journal of Quantum Electronics, 1976
- Dynamic Burstein shift in GaAsSolid State Communications, 1976
- Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)Journal of Applied Physics, 1973
- Spontaneous and Stimulated Carrier Lifetime (77°K) in a High-Purity, Surface-Free GaAs Epitaxial LayerJournal of Applied Physics, 1970
- DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASERApplied Physics Letters, 1970
- Oscillations in GaAs Spontaneous Emission in Fabry-Perot CavitiesPhysical Review Letters, 1963