Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1−xAs/GaAs superlattices
- 1 February 1981
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3) , 118-120
- https://doi.org/10.1063/1.92295
Abstract
The low‐threshold continuous room‐temperature laser operation of a photopumped metalorganic chemical vapor deposition AlxGa1−x As‐GaAs superlattice is described. The superlattice, a bare superlattice without cladding or confining layers, consists of 25 140‐Å AlxGa1−x As (x∼0.3) coupling barriers doped to a level nd ∼7×1017/cm3 and 25 alternating undoped 140‐Å GaAs quantum wells. Low‐temperature data (77 K) are presented indicating that the threshold for phonon‐assisted recombination occurs near the excitation level at which the excess carrier density approaches the built‐in carrier density ∼7×1017/cm3 of the superlattice.Keywords
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