Reflectance-difference probing of surface kinetics of (001) GaAs during vacuum chemical epitaxy
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 115-119
- https://doi.org/10.1016/0022-0248(91)90957-7
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Reflectance-difference study of surface chemistry in MOVPE growthJournal of Crystal Growth, 1991
- In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption methodJournal of Crystal Growth, 1991
- Reflectance-difference detection of growth oscillationsJournal of Crystal Growth, 1990
- A compact VCE growth system for in situ studies of epitaxyJournal of Crystal Growth, 1990
- Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxyApplied Physics Letters, 1990
- Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAsJournal of Vacuum Science & Technology A, 1989
- Epitaxial growth from organometallic sources in high vacuumJournal of Vacuum Science & Technology B, 1986