Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxy
- 11 June 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (24) , 2414-2416
- https://doi.org/10.1063/1.102895
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAsJournal of Vacuum Science & Technology A, 1989
- Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxyApplied Physics Letters, 1988
- Observations on intensity oscillations in reflection high-energy electron diffraction during chemical beam epitaxyApplied Physics Letters, 1987
- The Atomistic Nature of Compound Semiconductor Interfaces and the Role of Growth InterruptionMRS Proceedings, 1987
- Anisotropies in the Above—Band-Gap Optical Spectra of Cubic SemiconductorsPhysical Review Letters, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor depositionJournal of Applied Physics, 1981