A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor deposition
- 1 November 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11) , 6939-6943
- https://doi.org/10.1063/1.328648
Abstract
A new technique for multilayer growth by metalorganic chemical vapor deposition is described. The vacuum metalorganic chemical vapor deposition technique combines the low-temperature growth capability of molecular beam epitaxy with the source handling system of chemical vapor deposition. The viability of the new technique is demonstrated by the growth of high-mobility layers of GaAs, GaAs(1−x)P(x), and Ga(1−x)In(x)As at 570 °C. Room-temperature mobilities of GaAs films as high as 4990 cm2/V s are obtained. Doping of both p-type and n-type films is demonstrated. GaAs shallow homojunction solar cells fabricated with this technique are described. Active-area solar cell efficiencies as high as 19.6% are obtained with 6 ’’suns’’ AM2 concentrated light. This multilayer growth technique is particularly suited to the fabrication of multicolor solar cells.This publication has 8 references indexed in Scilit:
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