Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
- 1 October 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 656-658
- https://doi.org/10.1063/1.90454
Abstract
Smooth epitaxial single-crystalline layers of (100) ZnSe on (100) GaAs substrates are grown by a new low-pressure low-temperature organometallic chemical vapor deposition process. The strong band-edge photoluminescence peak and the absence of any substantial luminescence intensity at longer wavelengths indicate an absence of deep trapping centers which is typically not observed in other CVD growth.Keywords
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