Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8) , 473-475
- https://doi.org/10.1063/1.90090
Abstract
Room‐temperature Ga(1−x)AlxAs‐GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO‐CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid‐phase epitaxy. The lowest threshold achieved is 590 A/cm2 for a laser with an active layer thickness of d=1100 Å and Ga(1−x)AlxAs confinement layers with x∼0.50.Keywords
This publication has 15 references indexed in Scilit:
- Room-temperature laser operation of quantum-well Ga(1−x)AlxAs-GaAs laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1978
- Ga(1−x)AlxAs/Ga(1−y)AlyAs double-heterostructure room-temperature lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977
- InxGa1−xAsyP1−y/InP heterojunction photodiodesApplied Physics Letters, 1977
- Lattice distortion in LPE Ga1−xAlxAs layersJournal of Crystal Growth, 1977
- Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAsActa Crystallographica Section A, 1976
- Very low-threshold double-heterojunction AlxGa1−xAs injection lasersApplied Physics Letters, 1975
- The angular beam divergence in double-heterojunction lasers with very thin active regionsIEEE Journal of Quantum Electronics, 1975
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAsJournal of Crystal Growth, 1974
- Gain-current relation for GaAs lasers with n-type and undoped active layersIEEE Journal of Quantum Electronics, 1973