InxGa1−xAsyP1−y/InP heterojunction photodiodes
- 1 October 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 468-470
- https://doi.org/10.1063/1.89718
Abstract
The photoelectronic properties of quaternary alloy heterojunction photodiodes made of liquid‐phase‐grown In0.88Ga0.12As0.25P0.75 layers deposited onto p‐doped InP substrates have been investigated experimentally and analytically. It is shown that a typical photodiode with a peak responsivity of 0.26 A/W (at 1.02 μm) has a quantum efficiency of ∼22% at 1.06 μm.Keywords
This publication has 6 references indexed in Scilit:
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Analysis and design considerations of Burstein narrow-band photon detectorsPhysica Status Solidi (a), 1976
- Efficient lattice-matched double-heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−yApplied Physics Letters, 1976
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Heterojunction lasers made of GaxIn1–xAsyP1–yand AlxGa1–xSbyAS1–ysolid solutionsSoviet Journal of Quantum Electronics, 1975
- Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eVJournal of Applied Physics, 1975