Evidence for low surface recombination velocity on n-type InP
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (5) , 247-249
- https://doi.org/10.1063/1.89352
Abstract
A comparison was made of the photoluminescent (PL) intensities of n‐type InP and GaAs at room temperature. The PL intensity for InP was over 100 times greater than for comparably doped GaAs. The effect of surface recombination velocity S on the PL intensity was evaluated numerically. When this evaluation is applied to the PL intensity ratios of n‐type InP and GaAs it shows that S for n‐type InP is sufficiently small to eliminate significant influence of nonradiative surface recombination on the observed PL intensity.Keywords
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