Ga(1−x)AlxAs/Ga(1−y)AlyAs double-heterostructure room-temperature lasers grown by metalorganic chemical vapor deposition
- 15 December 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (12) , 839-841
- https://doi.org/10.1063/1.89569
Abstract
Room‐temperature operation of Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (MO‐CVD) has been achieved. These devices have Ga(1−y)AlyAs active layers of 0.8≲y≲0.12 and emit in the wavelength range 8000<λ2 have been fabricated. These lasers are produced from five‐layer epitaxial structures grown entirely by the MO‐CVD process and are the first such devices to be fabricated from materials grown by a vapor‐phase process.Keywords
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