High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 201-203
- https://doi.org/10.1063/1.89647
Abstract
High‐efficiency GaAlAs/GaAs heterostructure solar cells have been grown by metalorganic chemical vapor deposition (MO−CVD). Simulated air‐mass‐zero (AM0) short‐circuit current densities of 24.5 mA/cm2, open‐circuit voltages of 0.99 V, fill factors of 0.74, and efficiencies of 12.8% have been measured on devices without AR coatings (uncorrected for contact area). These cell structures employ a thin (∼520Å) GaAlAs : Zn window and a GaAs : Zn/GaAs : Se p‐n junction grown entirely by the MO‐CVD process.Keywords
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