Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
- 1 October 1977
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (7) , 466-468
- https://doi.org/10.1063/1.89743
Abstract
Room-temperature pulsed laser operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition (MO-CVD) has been achieved. Threshold current densities as low as 1.2 kA/cm2 have been attained in totally internally reflecting devices. In broad-area Fabry-Perot diodes, threshold current densities as low as 3 kA/cm2 have been attained. These lasers are fabricated from five-layer epitaxial structures grown entirely by the MO-CVD process.Keywords
This publication has 13 references indexed in Scilit:
- Heterostructure injection lasersProceedings of the IEEE, 1976
- Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride techniqueJournal of Crystal Growth, 1975
- Hillocks on epitaxial GaAs grown from trimethylgallium and arsineJournal of Crystal Growth, 1974
- GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxyApplied Physics Letters, 1974
- Properties of Epitaxial Gallium Arsenide from Trimethylgallium and ArsineJournal of the Electrochemical Society, 1973
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971
- A low-threshold room-temperature injection laserIEEE Journal of Quantum Electronics, 1969
- Epitaxial Gallium Arsenide from Trimethyl Gallium and ArsineJournal of the Electrochemical Society, 1969
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968