GaAs–Alx Ga1−x As double-heterostructure lasers prepared by molecular-beam epitaxy
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5) , 288-290
- https://doi.org/10.1063/1.1655476
Abstract
GaAs–Alx Ga1−x As double‐heterostructure (DH) lasers that exhibit laser properties similar to DH lasers prepared by liquid‐phase epitaxy have been prepared by molecular‐beam epitaxy. For a structure with a 0.53‐μ‐thick active layer, the as‐grown threshold current density at room temperature was 3.5×104 A/cm2, but by annealing the threshold was reduced to 4.0×103 A/cm2.Keywords
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