Hillocks on epitaxial GaAs grown from trimethylgallium and arsine
- 31 December 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 26 (2) , 314-316
- https://doi.org/10.1016/0022-0248(74)90262-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effect of various growth parameters on the formation of pits and hillocks on the surface of epitaxial GaAs layersJournal of Crystal Growth, 1973
- Pits and Hillocks on epitaxial GaAs grown from the vapor phaseJournal of Crystal Growth, 1971
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- Growth “pyramids” in epitaxial GaAsSolid State Communications, 1966
- The Effects of Substrate Orientation on Epitaxial GrowthJournal of the Electrochemical Society, 1965