The effect of various growth parameters on the formation of pits and hillocks on the surface of epitaxial GaAs layers
- 1 January 1973
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 19 (2) , 85-89
- https://doi.org/10.1016/0022-0248(73)90015-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Vapor Growth of a Semiconductor SuperlatticeJournal of the Electrochemical Society, 1971
- Mass Spectrometric Studies of Vapor Phase Crystal GrowthJournal of the Electrochemical Society, 1971
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Influence of Vapor Composition on the Growth Rate and Morphology of Gallium Arsenide Epitaxial FilmsJournal of the Electrochemical Society, 1964