Pits and Hillocks on epitaxial GaAs grown from the vapor phase
- 1 January 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 8 (1) , 37-44
- https://doi.org/10.1016/0022-0248(71)90020-0
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Nucleation of epitaxial films at chemical growthThin Solid Films, 1969
- Preparation and Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1969
- Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium ArsenideJournal of Applied Physics, 1967
- Growth “pyramids” in epitaxial GaAsSolid State Communications, 1966
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Influence of Vapor Composition on the Growth Rate and Morphology of Gallium Arsenide Epitaxial FilmsJournal of the Electrochemical Society, 1964
- Structure Defects in Pyrolytic Silicon Epitaxial FilmsJournal of Applied Physics, 1963