Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (7) , 2893-2896
- https://doi.org/10.1063/1.1710019
Abstract
A study has been made of hillock‐like features which sometimes occur on {1, 0, 0} surfaces of epitaxial gallium arsenide. X‐ray diffraction topography reveals that the hillocks contain cores of twin which originate at, or near, the epitaxial interface. During growth of the layer the twins can become buried, leaving a surface which is matrix‐oriented.This publication has 11 references indexed in Scilit:
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